Abstract
The resistivity ρ and Hall coefficient R H of a wide gap semiconductor β-Ga2O3 have been investigated using crystals with various Si-doping that were purified by the zone-melting process. For the crystals with the conduction electron density
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CITATION STYLE
APA
Tomioka, Y., Ozaki, Y., Inaba, H., & Ito, T. (2019). Compensation effects between impurity cations in single crystals of a wide gap semiconductor β-Ga2O3 prepared by the floating zone method. Japanese Journal of Applied Physics, 58(9). https://doi.org/10.7567/1347-4065/ab39be
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