Effect of Optical Spin Injection on Ferromagnetically Coupled Mn Spins in the III-V Magnetic Alloy Semiconductor [Formula presented]

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Abstract

We report on the new type of photoinduced magnetization in ferromagnetic [Formula presented] thin films. Optically generated spin-polarized holes change the orientation of ferromagnetically coupled Mn spins and cause a large change in magnetization, being [Formula presented] of the saturation magnetization, without the application of a magnetic field. The memorization effect has also been found as a trace after the photoinduced magnetization. The observed results suggest that a small amount of nonequilibrium carrier spins can cause collective rotation of Mn spins presumably through the [Formula presented] exchange interaction. © 2002 The American Physical Society.

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Oiwa, A., Mitsumori, Y., Moriya, R., Słupinski, T., & Munekata, H. (2002). Effect of Optical Spin Injection on Ferromagnetically Coupled Mn Spins in the III-V Magnetic Alloy Semiconductor [Formula presented]. Physical Review Letters, 88(13), 4. https://doi.org/10.1103/PhysRevLett.88.137202

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