A high-efficiency aging test with new data processing method for semiconductor device

Abstract

The aging test of semiconductor devices plays a crucial role in modeling the degradation mechanisms. Conventionally, the voltage stress used to accelerate aging is determined by testing the substrate current. However, the substrate current is easy to be affected by various noises, which will degrade the test accuracy. Besides, the conventional approach cannot provide a large quantity of test data due to enormous consuming of time and device samples. To this point, here in this paper we propose a high-efficiency aging test method, which determines the voltage stress according to the median degradation of device electrical indicators instead of the substrate current, making the test time effectively reduced while with more precision. Simultaneously, a data weighting approach is presented in this paper, which improves the accuracy of the test data. The key model parameters are extracted by fitting the processed data. Finally, the simulation results of the aging model are compared with the results of the conventional test method. The contrast shows that the method proposed in this paper is accurate and practicable, meanwhile reduces the cost of aging test, which brings great convenience to reliability modeling.