High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers

Abstract

Efficient, high-power, Al-free active-region diode lasers emitting at λ = 0.83 μm have been grown by low-pressure metallorganic chemical vapor deposition. Two laser structures were studied. The first used In0.5(Ga0.5Al0.5)0.5P cladding layers and provided 1-mm-long, uncoated devices with Jth = 220A/cm2, 4.6 W maximum cw output power and ηp,max = 45%. The second used on the p-side 0.1-μm-thick carrier-blocking layers of Al0.85Ga0.15As and In0.5(Ga0.5Al0.5)0.5P followed by an In0.5(Ga0.9Al0.1)0.5P cladding layer, and thus provided 4.7 W cw power and a COMD power density twice that of AlGaAs-active-layer devices. Therefore, these newly developed Al-free devices have the potential to be significantly more reliable than AlGaAs-based 0.81 μm devices.