Abstract
Cadmium-free Cu(In, Ga)Se 2 (CIGS) solar cells have been fabricated with ZnS buffer layers by using a chemical bath deposition (CBD). Significant improvement of current-voltage (J-V) performance was observed in the device after light soaking and rapid thermal annealing (RTA). The improvement by light soaking is a temporary phenomenon. On the contrary, RTA treatment is permanent improvement, which increases V OC and FF, moreover, accelerates the increasing rate of efficiency caused by light soaking, which results in a shorten time to achieve high performance. © 2011 IEEE.
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CITATION STYLE
Chien, C. Y., Chen, C. H., Tsai, C. P., Shieh, J. M., Hsiao, Y. J., & Lai, C. H. (2011). Performance improvement of CIGS solar cells with CBD-ZnS buffer layers by light soaking and rapid thermal annealing. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 001255–001258). https://doi.org/10.1109/PVSC.2011.6186185
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