Solution-processable triarylamine-based high-performance polymers for resistive switching memory devices

Abstract

This review summarizes the most widely used mechanisms in high-performance polymeric resistive memory devices, such as charge transfer, space charge trapping and filament conduction. In addition, recent studies of functional high-performance polymers for memory device applications are reviewed, compared and differentiated based on the mechanisms and structural design methods used. By carefully designing the polymeric structure based on these systematically investigated switching mechanisms, almost all types of current memory characteristics can be reproduced, and these memory properties show extremely high endurance during long-term operation, which makes polyimides very suitable materials for memory applications.