On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon

Abstract

The effectiveness of a method for analytically reducing the effect of trapping centers on photoconductance-based recombination lifetime measurements in silicon is examined. The correction method involves the use of a "bias-light" term to subtract out the underlying photoconductance due to the traps. The technique extends, by approximately an order of magnitude, the range of carrier densities over which reasonably accurate (within 30%) measurements of the recombination lifetime can be made. Guidelines for determining which bias-light intensity will produce the best correction for solar grade multicrystalline silicon wafers, and the range over which it is valid, are developed for several practical cases. © 2001 American Institute of Physics.