High-temperature electroluminescence of InGaN/GaN light-emitting devices with multiple quantum barriers

0Citations
Citations of this article
12Readers
Mendeley users who have this article in their library.

Abstract

We investigate the high-temperature characteristics of InGaN/GaN multiple quantum well light-emitting devices with and without multiple quantum barriers (MQBs) in depth. The electroluminescence measurements were carried out over a temperature range from 200 to 380 K and an injection current level from 1 to 100 mA. Enhanced carrier confinement and stronger carrier localization in the active layer are achieved for the sample with MQBs. Furthermore, it is found that the external quantum efficiency of the sample possessing MQBs is higher than that of the sample with GaN barriers. The MQB structure improves the high-temperature operation of light-emitting devices. © 2012 Ya-Fen Wu.

Cite

CITATION STYLE

APA

Wu, Y. F. (2012). High-temperature electroluminescence of InGaN/GaN light-emitting devices with multiple quantum barriers. Advances in Condensed Matter Physics, 2012. https://doi.org/10.1155/2012/145689

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free