Growth of AlGaN/GaN heterostructure on vicinal m-plane free-standing GaN substrates prepared by the Na flux method

Abstract

We fabricated and characterized AlGaN/GaN heterostructure growth by MOVPE on vicinal m-plane free-standing GaN substrates prepared by the Na flux method. The miscut angle in the LPE-GaN substrate has a great influence on the surface morphology and crystalline quality of epitaxial GaN and AlGaN films. In particular, AlGaN/GaN on a 4° miscut-angle LPE-GaN substrate shows large step bunching, small-miscut-angle LPE GaN substrate is essential for fabricating on FET structure with a flat surface. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.