An Insulated Shallow Extension Structure for Bulk MOSFET

Abstract

This brief proposes possible a replacement of shallow p-n junction with insulated shallow extension (ISE) structure for bulk MOSFET. The shallow extension is defined by the sidewall thermal oxide rather than the implanted p-n junction. With this insulator for extension and main junction, a heavier halo doping concentration can be used. Thus, the threshold-voltage roll-off and the junction leakage current can be minimized simultaneously. This structure can be a good alternative for junction structures in sub-100-nm regimes.