Anisotropic magnetoresistance in topological insulator Bi 1.5Sb0.5Te1.8Se1.2/CoFe heterostructures

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Abstract

Topological insulator is composed of an insulating bulk state and time reversal symmetry protected two-dimensional surface states. One of the characteristics of the surface states is the locking between electron momentum and spin orientation. Here, we report a novel in-plane anisotropic magnetoresistance in topological insulator Bi1.5Sb 0.5Te1.8Se1.2/CoFe heterostructures. To explain the novel effect, we propose that the Bi1.5Sb0.5Te 1.8Se1.2/CoFe heterostructure forms a spin-valve or Giant magnetoresistance device due to spin-momentum locking. The novel in-plane anisotropic magnetoresistance can be explained as a Giant magnetoresistance effect of the Bi1.5Sb0.5Te1.8Se 1.2/CoFe heterostructures. © 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License.

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Xia, B., Ren, P., Sulaev, A., Li, Z. P., Liu, P., Dong, Z. L., & Wang, L. (2012). Anisotropic magnetoresistance in topological insulator Bi 1.5Sb0.5Te1.8Se1.2/CoFe heterostructures. AIP Advances, 2(4). https://doi.org/10.1063/1.4769894

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