Experimental Characterization of ALD Grown Al 2 O 3 Film for Microelectronic Applications

Abstract

The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al 2 O 3 thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al 2 O 3 films of MIM capacitors on glass was examined in the voltage range from −5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al 2 O 3 /ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/µm 2 at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10 −8 A/cm 2 at 1 MV/cm (5 V) at room temperature. Au/Al 2 O 3 /TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/µm 2 at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10 −10 A/cm 2 at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.