Investigation of domain wall pinning by square anti-notches and its application in three terminals MRAM

Abstract

In this work, we perform investigations of the competition between domain-wall pinning and attraction by antinotches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allows the proposition of a three-terminal device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between antinotches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurements. Thus, our proposed device is a promising magnetoresistive random access memory device with good scalability, duration, and high speed information storage.