Formation of cuin(Ga)se2 thin films by selenization and application to solar cell

Abstract

Preparation conditions of device-quality CuInSe2 (CIS) and CuIn1_x GaJCSe2 (CIGS) thin films were studied. We formed CIS and CIGS films by annealing different types of precursor films, such as Gu/In stacked films and Cu-In-Seco-deposited films, under H2Se atmosphere. We obtained CI(G)S films with large grain size using precursors prepared at200°C. The grain sizes of CI(G)S film using stacked precursors were larger than those using co-deposited precursors. Useof co-deposited precursors reduced formation of MoSe2 at Mo/CI(G)S boundary during selenization process. Fill-factor(FF) exceeding 0.7 was obtained for CIS cells using co-deposited precursors prepared at substrate temperature of200°C. © 1993 The Japan Society of Applied Physics.