Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

Abstract

In this work, low-frequency noise (LFN) of bridged-grain (BG) polycrystalline silicon thin-film transistors (TFTs) is characterized and studied for the first time. The noise power spectral density (PSD) of drain current follows the classical 1/f noise theory. The carrier number with the correlated mobility fluctuation model dominates the device 1/f noise. Compared with normal TFTs, BG TFTs show a much smaller level of LFN, which is mainly attributed to grain boundary (GB) barrier lowering and trap density reduction.