Iridium-related complexes in Czochralski-grown β-Ga2O3

Abstract

Gallium oxide is a promising semiconductor for its potential as a material in the field of power electronics. The effects of iridium impurities on undoped, Mg-doped, and Ca-doped gallium oxides were investigated with IR spectroscopy. In undoped and Ca-doped β-Ga2O3, IR peaks at 3313, 3450, and 3500 cm-1 are tentatively assigned to O-H bond-stretching modes of IrH complexes. Mg-, Ca-, and Fe-doped samples show an Ir4+ electronic transition feature at 5148 cm-1. By measuring the strength of this feature vs photoexcitation, the Ir3+/4+ donor level was determined to lie 2.2-2.3 eV below the conduction band minimum. Ga2O3:Mg also has a range of sidebands between 5100 and 5200 cm-1, attributed to IrMg pairs. Polarized IR measurements show that the 5248 cm-1 peak is anisotropic, weakest for light polarized along the c axis, consistent with Lenyk et al. [J. Appl. Phys. 125, 045703 (2019)].