Qualification of Operational Amplifier used in Satellite Subsystem using Picosecond Pulsed Laser System

Abstract

Picosecond Pulsed Laser System (PPLS) was used to simulate the single event effects (SEE) on satellite electronic components. Single event transients effect induced in an operational amplifier (LM324) to determine how transient amplitude and charge collection varied with pulsed laser energies. The wavelength and the focused spot size are the primary factors generating the resultant charge density profile. The degradation performance of LM324 induced by pulsed laser irradiation with two wavelength (1064nm, 532nm) is determined as a function of laser cross section. The transient voltage changed due to pulsed laser hitting specific transistors. This research shows the sensitivity mapping of LM324 under the effect of fundamental and second harmonic wavelengths. Determine the threshold energy of the SET in both wavelength, and compare the laser cross section of 1064 nm beam and 532 nm beam.