Effect of microwave annealing temperatures on lead zirconate titanate thin films

Abstract

Lead zirconate titanate (Pb1.1(Zr0.52Ti 0.48)O3) thin films of thickness 260 nm on Pt/Ti/SiO 2/Si substrates were densified by 2.45 GHz microwave annealing. The PZT thin films were annealed at various annealing temperatures from 400 to 700°C for 30 min. X-ray diffraction showed that the pyrochlore phase was transformed to the perovskite phase at 450°C and the film was fully crystallized. The secondary (again pyrochlore) phase was observed in the PZT thin films, which were annealed above 550°C. The surface morphologies were changed above 550°C of the PZT thin films due to the secondary phase. Higher dielectric constant (εr) and lower dielectric loss coercive field (Ec) were achieved for the 450°C film than for the other annealed films. © IOP Publishing Ltd.