Abstract
The properties of InSb quantum dots grown by metal organic vapour phase epitaxy are summarised as deduced from photoluminescence, magneto-photoluminescence, and far-infrared modulated photoluminescence experiments. A technique is described for shifting the emission of these dots to lower energy by coupling them with a narrow InAs quantum well, leading to the demonstration of electroluminescence at ∼ 2.3 μm. © 2003 Elsevier B.V. All rights reserved.
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Nicholas, R. J., Shields, P. A., Child, R. A., Li, L. J., Alphandéry, E., Mason, N. J., & Bumby, C. (2004). Properties of narrow gap quantum dots and wells in the InAs/InSb/GaSb systems. In Physica E: Low-Dimensional Systems and Nanostructures (Vol. 20, pp. 204–210). https://doi.org/10.1016/j.physe.2003.08.004
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