Abstract
Nickel silicide nanowires (NSNWs) have been fabricated and characterized. We propose a fabrication process for one-dimensional silicon nanowires (SiNWs) using scanning probe lithography (SPL) technology and anisotropic wet etching with tetramethylammonium hydroxide (TMAH) solution on a (100) Si layer of silicon on insulator (SOI) substrate. Subsequently, the thin Nickel films (∼50nm) evaporated on SiNWs and the nickel monosilicide was formed by solid-state reaction between nickel and silicon under a rapid thermal annealing (RTA) in N2 ambient for 1 min. Then, the electrical properties of the SiNWs and NSNWs have also been examined and compared. ©2005 IEEE.
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Sheu, J. T., Yeh, S. P., Tsai, S. T., & Lien, C. H. (2005). Fabrication and electrical transport properties of nickel monosilicide nanowires. In 2005 5th IEEE Conference on Nanotechnology (Vol. 2, pp. 780–783). IEEE Computer Society. https://doi.org/10.1109/NANO.2005.1500647
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