We have successfully grown a-axis-oriented p-type BaSi2 films on Si(111) by in situ boron (B) doping using molecular beam epitaxy (MBE). The hole concentration in B-doped BaSi2 was controlled in the range between 1017 and 1019 cm-3 at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level was estimated to be approximately 23 meV. © 2013 Elsevier B.V. All rights reserved.
CITATION STYLE
Khan, M. A., Hara, K. O., Nakamura, K., Du, W., Baba, M., Toh, K., … Suemasu, T. (2013). Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells. Journal of Crystal Growth, 378, 201–204. https://doi.org/10.1016/j.jcrysgro.2012.12.153
Mendeley helps you to discover research relevant for your work.