Modeling and simulation have become indispensable tools for the understanding and optimization of lithographic processes and for the development of new process technology. Aerial image simulation is used to evaluate the imaging of designed photomasks and to explore the impact of optical parameters, such as numerical aperture (NA), partial coherence s, and defocus, and wave aberrations on the imaging performance of a projection stepper or scanner. Other simulation approaches are used to describe the impact of the photoresist thickness, of the post-exposure bake (PEB) temperature and of the development characteristics of the photoresist on the total process performance. Lithography simulation is also used as an effective learning tool for new process engineers, scientists, and managers.
CITATION STYLE
Erdmann, A. (2005). Modeling and simulation. In Handbook of Photomask Manufacturing Technology (pp. 649–692). CRC Press. https://doi.org/10.4325/seikeikakou.34.340_1
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