Abstract
Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted. © Indian Academy of Sciences.
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Bari, R. H., Ganesan, V., Potadar, S., & Patil, L. A. (2009). Structural, optical and electrical properties of chemically deposited copper selenide films. Bulletin of Materials Science, 32(1), 37–42. https://doi.org/10.1007/s12034-009-0006-z
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