Demonstration of Cell-to-Cell Integrated 4H-SiC Lateral Bi-Directional Junction Field Effect Transistor (LBiDJFET)

Abstract

This paper reports the experimental results of the fabricated 4H-SiC Lateral Junction Field Effect Transistor (LJFET) and cell-to-cell integrated Lateral Bi-directional JFET (LBiDJFET). It was found that the reverse conduction characteristics of SiC LJFET were better than the forward conduction characteristics in terms of on-state resistance. The conduction mechanism of LBiDJFET can be described by the series connection of the forward and reverse conduction of LJFETs. This intriguing behavior of the cell-to-cell integration approach is promising because it can greatly reduce the wafer area consumed while achieving the bi-directional functions.