Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2

Abstract

Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe2 lattice as well as tunable nitrogen concentration with N2 plasma exposure time. Furthermore, nitrogen incorporation induces compressive strain on the WSe2 lattice after N2 plasma exposure. Finally, atomic force microscopy and scanning tunneling microscopy reveal that N2 plasma treatment needs to be carefully tuned to avoid any unwanted strain or surface damage.