Characteristics of Fabricated Neutron Detectors Based on a SiC Semiconductor

Abstract

Wide-band-gap semiconductors such as SiC, AlN, and GaN are promising materials for harsh environment applications due to their high-temperature operation capability. Two types of PIN-type semiconductor neutron detectors based on SiC were designed and fabricated for nuclear power plant (NPP) applications such an in-core reactor neutron flux monitoring and safeguarding nuclear materials. One is for fast neutron detection and the other, which was evaporated with 6LiF, is for thermal neutron detection. In this study, preliminary tests, such as the determination of I-V and alpha responses, were performed. Reaction probabilities with respect to neutron energies were also calculated by using an MCNPX code for comparison with the experimental results. Responses of the neutrons were measured at the Ex-core Neutron irradiation Facility (ENF) of the High-flux Advanced Neutron Application Reactor (HANARO) research reactor at the Korea Atomic Energy Research Institute (KAERI). Pulse height spectra and count rates were measured with respect to the neutron fluxes from 1.6 × 106 n/cm2·s to 1.9 × 107 n/cm2·s. Also, a 0.99 root-mean-square value of linearity against the fluxes to the count rates was obtained with the fabricated neutron detectors. For a thermal neutron detector, a 3.3% detection efficiency was obtained.