Single-photon property characterization of 1.3 μm emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes

Abstract

We developed a new approach to test the single-photon emissions of semiconductor quantum dots (QDs) in the optical communication band. A diamond-anvil cell pressure device was used for blue-shifting the 1.3μm emissions of InAs/GaAs QDs to 0.9μm for detection by silicon avalanche photodiodes. The obtained g (2) (0) values from the second-order autocorrelation function measurements of several QD emissions at 6.58 GPa were less than 0.3, indicating that this approach provides a convenient and efficient method of characterizing 1.3μm single-photon source based on semiconductor materials.