Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe 1-xO x alloys

Abstract

Highly mismatched ZnTe 1-xO x(ZnTeO) alloys have been grown by molecular beam epitaxy. X-ray diffraction (XRD) analyses showed that a single-phase ZnTeO layer were grown with a substitutional O composition x up to 1.34% on ZnTe(001) substrate in this experiments. Optical transitions associated with the lower (E -) and upper (E +) conduction subbands resulting from the anticrossing interaction between the localized O states and the extended conduction states of ZnTe were clearly observed, and the dependence of the energy position of these bands on the O composition was consistent with the band anticrossing model. © 2012 American Institute of Physics.