Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf0.5Zr0.5O2-Based Capacitors Through Operando Nanobeam X-Ray Diffraction

Abstract

Understanding various aspects of ferroelectricity in hafnia-based nanomaterials is of vital importance for the development of future nonvolatile memory and logic devices. Here, the unconventional and weak electromechanical response of epitaxial La0.67Sr0.33MnO3/Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 ferroelectric capacitors is investigated, via the sensitivity offered by nanobeam X-ray diffraction experiments during application of electrical bias. It is shown that the pristine rhombohedral phase exhibits a linear piezoelectric effect with piezoelectric coefficient (|d33|) ≈ 0.5–0.8 pmV−1. It is found that the piezoelectric response is suppressed above the coercive voltage. For higher voltages, and with the onset of DC conductivity throughout the capacitor, a second-order effect is observed. The work sheds light into the electromechanical response of rhombohedral Hf0.5Zr0.5O2 and suggests its (un)correlation with ferroelectric switching.