Abstract
GeSe2 nanobelts were synthesized via a simple thermal-evaporation process by using gold particles as catalyst and GeSe 2 flakes as starting materials. The morphology, crystal structure, and composition were characterized with scanning electron microscopy (SEM), high-resolution transmission electron microscopy (TEM), X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), and energy-dispersive X-ray spectroscopy (EDS). SEM micrographs show that most of GeSe2 nanobelts have distinct segmented structures (wide belt, zigzag belt, and narrow belt). A possible mechanism was proposed for the growth of segmented nanobelts. It is possible that the growth of the segmented nanobelts is dominated by both vapor-liquid-solid and vapor-solid mechanisms. Devices made of single GeSe2 nanobelt have been fabricated and their photoelectrical property has been investigated. Results indicate that these nanobelt devices are potential building blocks for optoelectronic applications. © 2014 Lijie Zhang et al.
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CITATION STYLE
Zhang, L., Yu, H., Yang, Y., Yang, K., Dong, Y., Huang, S., … Zhu, D. M. (2014). Synthesis of GeSe2 nanobelts using thermal evaporation and their photoelectrical properties. Journal of Nanomaterials, 2014. https://doi.org/10.1155/2014/310716
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