Electrophysical and photocatalytic properties of SnO2-ZnO thin films prepared by sol-gel method

Abstract

Electrophysical properties of SnO2-ZnO thin films prepared by sol-gel method have been studied. The resistance of thin films have a temperature hysteresis, the films resistance decreases up to two times when the temperature reaches 210-300 °C and returns to its initial value when cooling down to 90-30 °С. That phenomenon can be explained by the processes of thermal generation - recombination of electrons, and adsorption - desorption of oxygen on the surface of the films.