On the dynamics in chemical vapor deposition of InN

Abstract

Epitaxial nanometer-thin indium nitride (InN) films are considered promising active layers in various device applications but remain challenging to deposit. We compare the morphological evolution and characterizations of InN films with various growth conditions in chemical vapor deposition (CVD) by both a plasma atomic layer deposition (ALD) approach and a conventional metalorganic CVD approach. Our results show that a time-resolved precursor supply is highly beneficial for deposition of smooth and continuous InN nanometer-thin films. The time for purging the reactor between the precursor pulses and low deposition temperature are key factors to achieve homogeneous InN. The gas exchange dynamics of the reactor is further studied using computational fluid dynamics. According to our study, 320 °C is found to be the upper temperature where the dynamics of the deposition chemistry can be controlled to involve only surface reactions with surface species. The results highlight the promising role of the ALD technique in realizing electronic devices based on nanometer-thin InN layers.