Abstract
We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSb-based gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11W of output power at a wavelength range of 1180-1200nm and subsequent intracavity frequency doubling to generate yellow-orange radiation with power exceeding 7W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3m wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384fs at 2m, the shortest pulses obtained from a semiconductor laser at this wavelength range. © Copyright 2012 Mircea Guina et al.
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CITATION STYLE
Guina, M., Härkönen, A., Korpijärvi, V. M., Leinonen, T., & Suomalainen, S. (2012). Semiconductor disk lasers: Recent advances in generation of yellow-orange and Mid-IR radiation. Advances in Optical Technologies. https://doi.org/10.1155/2012/265010
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