Semiconductor disk lasers: Recent advances in generation of yellow-orange and Mid-IR radiation

20Citations
Citations of this article
26Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

We review the recent advances in the development of semiconductor disk lasers (SDLs) producing yellow-orange and mid-IR radiation. In particular, we focus on presenting the fabrication challenges and characteristics of high-power GaInNAs- and GaSb-based gain mirrors. These two material systems have recently sparked a new wave of interest in developing SDLs for high-impact applications in medicine, spectroscopy, or astronomy. The dilute nitride (GaInNAs) gain mirrors enable emission of more than 11W of output power at a wavelength range of 1180-1200nm and subsequent intracavity frequency doubling to generate yellow-orange radiation with power exceeding 7W. The GaSb gain mirrors have been used to leverage the advantages offered by SDLs to the 2-3m wavelength range. Most recently, GaSb-based SDLs incorporating semiconductor saturable absorber mirrors were used to generate optical pulses as short as 384fs at 2m, the shortest pulses obtained from a semiconductor laser at this wavelength range. © Copyright 2012 Mircea Guina et al.

Cite

CITATION STYLE

APA

Guina, M., Härkönen, A., Korpijärvi, V. M., Leinonen, T., & Suomalainen, S. (2012). Semiconductor disk lasers: Recent advances in generation of yellow-orange and Mid-IR radiation. Advances in Optical Technologies. https://doi.org/10.1155/2012/265010

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free