Si nanocrystal solution with stability for one year

Abstract

Colloidal silicon nanocrystals (SiNCs) are a promising material for next-generation nanostructured devices. High-stability SiNC solutions are required for practical use as well as studies on the properties of SiNC. Here, we show a solution of SiNCs that was stable for one year without aggregation. The stable solution was synthesized by a facile process, i.e., pulsed laser ablation of a Si wafer in isopropyl alcohol (IPA). The long-term stability was due to a large ζ-potential of −50 mV from a SiNC passivation layer composed of oxygen, hydrogen, and alkane groups, according to the results of eight experiments and theoretical calculations. This passivation layer also resulted in good performance as an additive for a conductive polymer film. Namely, a 5-fold enhancement in carrier density was established by the addition of SiNCs into an organic conductive polymer, poly(3-dodecylthiophene), which is useful for solar cells. Furthermore, it was found that fresh (<1 day) and aged (4 months) SiNCs give the same enhancement. The long-term stability was attributed to a great repulsive energy in IPA, whose value was quantified as a function the distance between SiNCs.