Abstract
We present photoluminescence studies of AIxGa1-xN/AlyGa1-yN (y = x+0.3) quantum well (QW) heterostructures with graded AI content in barrier layers, emitting in the range 285-315 nm. The best-established internal quantum efficiency of the QW emission is as high as 81% at 300 K, owing to enhanced activation energy of charge carriers and exciton binding energy in the QW heterostructure with optimized design.
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CITATION STYLE
Shevchenko, E. A., Nechaev, D. V., Jmerik, V. N., Kaibyshev, V. K., Ivanov, S. V., & Toropov, A. A. (2016). Enhanced photoluminescence efficiency in AlGaN quantum wells with gradient-composition AlGaN barriers. In Journal of Physics: Conference Series (Vol. 741). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/741/1/012118
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