Gate-controlled quantum dots in monolayer WSe2

Abstract

Quantum confinement and manipulation of charge carriers are critical for achieving devices practical for quantum technologies. The interplay between electron spin and valley, as well as the possibility to address their quantum states electrically and optically, makes two-dimensional (2D) transition metal dichalcogenides an emerging platform for the development of quantum devices. In this work, we fabricate devices based on heterostructures of layered 2D materials, in which we realize gate-controlled tungsten diselenide hole quantum dots. We discuss the observed mesoscopic transport features related to the emergence of quantum dots in the device channel, and we compare them to a theoretical model.