Heterogeneous Integration of Graphene and HfO2 Memristors

Abstract

The past decade has seen a growing trend toward utilizing (quasi) van der Waals growth for the heterogeneous integration of various materials for advanced electronics. In this work, pulsed-laser deposition is used to grow HfO2 thin films on graphene/SiO2/Si. As graphene is easily damaged under standard oxide-film deposition conditions, the process needs to be adjusted to minimize the oxidation and the collision-induced damage. A systematic study is conducted in order to identify the crucial deposition parameters for diminishing the defect concentration in the graphene interlayer. For evaluating the quality of graphene, it is mainly relied on data obtained from Raman spectroscopy, using approaches beyond the Tuinstra-Koenig relation. The results show that the defects are mainly a consequence of the high kinetic energy of the plasma-plume particles. Using a relatively high Ar process pressure, a sufficiently low defect concentration is ensured, without compromising the quality of the HfO2 thin film. This enabled us to successfully prepare memristive devices with a filamentary type of switching, utilizing the graphene layer as a bottom electrode. The findings of this study can be easily transferred to other systems for the development of oxide electronic devices.