High-efficiency p-Type Si solar cell fabricated by using firing-through aluminum paste on the cell back side

Abstract

Firing-through paste used for rear-side metallization of p-type monocrystalline silicon passivated emitter and rear contact (PERC) solar cells was developed. The rear-side passivation Al2O3 layer and the SiNx layer can be effectively etched by the firing-through paste. Ohmic contact with a contact resistivity between 1 to 10 mWΩ·cm2 was successfully fabricated. Aggressive reactive firing-through paste would introduce non-uniform etching and high-density recombination centers at the Si/paste interface. Good balance between low resistive contact formation and relatively high open-circuit voltage can be achieved by adjusting glass frit and metal powder content in the paste. Patterned dot back contacts formed by firing-through paste can further decrease recombination density at the Si/paste interface. A P-type solar cell with an area of 7.8 × 7.8 cm2 with a Voc of 653.4 mV and an efficiency of 19.61% was fabricated.