Abstract
Thin films of SnO2 were deposited on r-axis Al2O3 and characterized using scanning tunneling microscopy (STM), low energy electron diffraction, and x-ray photoelectron spectroscopy (XPS). The films grew in an epitaxial, layer-by-layer mode. A small miscut of the Al2O3 substrate (0.2°) resulted in parallel, uniformly-spaced, monatomic steps on the SnO2 film surface. Pd was deposited on the SnO2 films and characterized by STM and XPS. Below 2 monolayers, the Pd formed 10–20 nm islands with an apparent height of 0.5 nm. Increasing the Pd coverage eventually results in a continuous metal film that retains the granular surface topography of the isolated particle film. Annealing the films created a population of reduced metallic Sn that we attribute to Sn–Pd alloying but no significant change in the palladium particle morphology was observed.
Cite
CITATION STYLE
Poirier, G. E., Cavicchi, R. E., & Semancik, S. (1994). Particle growth of palladium on epitaxial tin oxide thin films. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 12(4), 2149–2152. https://doi.org/10.1116/1.579153
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