Abstract
A dual parameter representation of the barrier height and transmission extracted from ballistic electron emission spectroscopy spectra is presented and evaluated with respect to the noise present in the spectra and the conditions used for data fitting. Simulated dual parameter distributions incorporating only Gaussian (white) noise are compared to experimental dual parameter distributions for two interfaces, namely, Au/n-Si and Au/pentacene/n-Si. The authors find that for both measurements, noise and data fitting conditions can have significant influence on the distributions. Once these contributions are accounted for, such dual parameter representations provide statistical information related to the interfacial homogeneity of devices.
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CITATION STYLE
Troadec, C., & Goh, K. E. J. (2010). Dual parameter ballistic electron emission spectroscopy analysis of inhomogeneous interfaces. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 28(4), C5F1-C5F4. https://doi.org/10.1116/1.3428546
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