Influence of electron - Electron interaction on electron distributions in short Si-MOSFETs analysed using the local iterative Monte Carlo technique

Abstract

The effects of electron - electron interaction on the electron distribution in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are studied using the Local Iterative Monte Carlo (LIMO) technique. This work demonstrates that electron - electron scattering can be efficiently treated within this technique. The simulation results of a 90 nm Si-MOSFET are presented. We observe an increase of the high energy tail of the electron distribution at the transition from channel to drain.