Tunnel field-effect transistor with segmented channel

Abstract

A tunnel field-effect transistor with segmented channels (Seg-TFET) on a corrugated substrate is proposed. The Seg-TFET takes advantage of using three stripes and the selective contact configuration to define the direction of current, and thereby its device performance can be improved. Furthermore, the process flow of the Seg-TFET demonstrates a substantiation of the new device structure. Consequently, its current flow is simply defined by adjusting the appropriate contact configuration at metal-zero-level without any additional front-end-of-line process.