Laser damage mechanism and threshold improvement of nonlinear optical La 3 Ga 5.5 Nb 0.5 O 14 crystal for a mid-infrared high-intensity laser

Abstract

Laser damage threshold (LDT) is critical for optical devices in high-intensity laser applications. Understanding the influence mechanism of a high-intensity laser on optical materials is principal for improving the materials’ LDTs. Here, the LDT of La 3 Ga 5.5 Nb 0.5 O 14 (LGN) crystals, the most promising nonlinear optical material for mid-infrared optical parametric chirped-pulse amplification (OPCPA), were studied, and its laser damage mechanism was elucidated. Oxygen vacancies in different ligands have important and distinct effects on LDTs and introduce defect levels, playing primary roles in the reduction of LDTs by the absorption of electrons in the conduction bands. The formation of F-centers also decreases LDTs via two-photon absorption. In addition, the linear absorption of free electrons in the conduction bands contributes more than the two-photon absorption, induced by the defect level, in the nanosecond laser damage process. By annealing in optimized conditions, the 0% laser damage probability of the LGN crystals was measured up to 13.1 J/cm 2 , which is a 24% improvement compared with that of the as-grown sample, and the highest of the mid-infrared nonlinear optical crystals. The results can not only lead to further improvements in the laser amplification properties in OPCPA systems but also inspire further studies on the application of optical materials in high-intensity lasers.