In this work, the spatial resolution of two quantum well intermixing processes has been obtained using spatially resolved photoluminescence. The processes investigated are impurity-free vacancy disordering using Si O2 Si O2: P caps and sputtered silica induced intermixing. These studies aimed to choose a suitable intermixing technology to realize the band gap gratings for domain disordering quasi-phase-matching in GaAsAlGaAs heterostructures. From the photoluminescence studies it was established that the process of impurity-free vacancy disordering using Si O2 Si O2: P caps has a spatial resolution on the order of 7 μm, while the process of sputtered silica induced intermixing has a spatial resolution on the order of 3 μm. From these measurements it was demonstrated that the sputtered silica induced intermixing process is more suitable for the fabrication of the gratings needed for quasi-phase-matching in the samples studied here. Successful quasi-phase-matching demonstrated through second harmonic generation at 775 nm has been produced in GaAsAlAs short superlattice waveguides using sputtered silica induced intermixing through domain disordering quasi-phase-matching. The gratings have shown a duty cycle far from the targeted 1:1 design, which has implications on the conversion efficiency. © 2006 American Institute of Physics.
CITATION STYLE
Helmy, A. S., Bryce, A. C., Hutchings, D. C., Aitchison, J. S., & Marsh, J. H. (2006). Band gap gratings using quantum well intermixing for quasi-phase-matching. Journal of Applied Physics, 100(12). https://doi.org/10.1063/1.2402034
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