Molecular n-type doping for air-stable electron transport in vacuum-processed n-channel organic transistors

Abstract

The effects of n-type doping on the air-stability of vacuum-processed n-channel organic transistors have been investigated using perylene diimides and pyronin B as the active layer and dopant, respectively. Systematic studies on the influence of doping location revealed the n-type doping of bulk active layer or channel region significantly improves air-stability by compensating for the trapped electrons with the donated mobile electrons. Although n-type doping at the electrode contact could readily turn on the devices, it could not confer air-stable electron transport. The described approach would open up opportunities to enable and improve the stability of n-channel organic transistors in air. © 2010 American Institute of Physics.