Enhancement Photovoltaic Performance of p-i-n Amorphous Silicon Solar Cells with Intrinsic Layer

Abstract

The numerical simulation of a p-i-n amorphous silicon solar cell has been analyzed using the SCAPS-1D software. The effect of the thicknesses of the layers and doping concentration under the standard AM1.5 operating conditions are investigated on the output parameters cell, such as the open-circuit voltage Voc, the short-circuit current density Jsc, the fill factor FF, and the efficiency of power conversion.η. The simulation results indicated that the performance of the studied solar cell is related to temperature, p and n layer doping, and intrinsic layer thickness. The simulations revealed that the cell's performance is affected by these physical and photoelectric parameters. As a result, the experimental data was used to validate the simulation results. The experimental data and the simulation predictions were found to be in good accord. On the other hand, the obtained optimal parameters for high performance offer an efficiency of 11.61% with layer thicknesses (nm) of p, i, and n regions are respectively 9,300,100, and concerning n and p layers doping (cm-3) are respectively 1020 cm-3 and 1018 cm-3.