AuCl3 chemical doping on defective graphene layer

Abstract

This study investigated the effects of defects on chemical doping of graphene layer. Graphene grown by the chemical vapor deposition method on copper foil was subjected to ultraviolet treatments to introduce defects, including sp3 bonding and vacancies. The chemical doping process was performed using a gold chloride (AuCl3)/nitromethane solution at a concentration of 20 mM. Raman spectroscopy and four-point probe measurement were used to analyze the effects of AuCl3 doping on the electrical and optical properties of defective graphene. AuCl3 doping was effective for lowering sheet resistance even for the highly damaged graphene. Additionally, the 2D-peak of the defective graphene was partially recovered after AuCl3-based chemical doping. The authors believe that the defect engineering in graphene can enhance the electrical properties and the long-term stability of chemical doping.