Acoustic resonance in an independent-gate finfet

Abstract

This paper demonstrates the acoustic resonance of an Independent-Gate (IG) FinFET driven with internal dielectric transduction and sensed by piezoresistive modulation of the drain current through the transistor. An acoustic resonance at 37.1 GHz is obtained with a quality factor of 560, corresponding to an f.Q product of 2.1x1013. The demonstrated hybrid NEMS-CMOS technology can provide RF CMOS circuit designers with high-Q active devices operating up to mm-wave frequencies and beyond.