Discharging current transient spectroscopy for evaluating traps in insulators

Abstract

A novel method [discharging current transient spectroscopy (DOTS)] is developed for evaluating traps in insula­tors, and is then applied to silicon nitride (SiNx) films prepared by direct photo-chemical vapor deposition. A sin­gle-level trap on the order of 1016 cm-3 with an emission rate (ep) of around 0.3 s-1 and energetically distributed traps on the order of 1017 cm-3eV-1 with ep<0.1 s_1 are obtained at room temperature. © 1995 The Japan Society of Applied Physics.