Application of particle swarm optimization algorithm for better nano-devices

Abstract

Particle swarm optimization, an intelligent soft computing tool is employed to determine the optimized system parameters of GaAs quantum well for better high frequency performance under hot electron condition at room temperature. The energy loss through LO phonon and momentum loss through LO phonon, deformation acoustic phonon and ionized impurity (both background and remote) are incorporated in the present calculations. For a typical dc biasing field, it is possible to predict the optimum values of system parameters like lattice temperature, well width and two-dimensional carrier concentration for realizing a particular high frequency response characterised by well defined cut-off frequency. Such optimization will make feasible the fabrication of a variety of new quantum devices with desired characteristics. © 2009 Springer Berlin Heidelberg.